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Recent Publications Department No.16
1. A.P. Vlasov, O.Yu. Bonchyk, V.K. Pysarevsky, O.P. Storchun, A.V. Shevchenko, H.V. Pokhmurska, A. Barcz, Z. Swiatek. Controlled arsenic diffusion in epitaksial CdxHg1-xTe layers in the evaporation-condensation-diffusin process. Thin Solid Films, 403-404, 2002, p.144-147. 2. A.P. Vlasov, O.Yu. Bonchyk, V.K. Pysarevsky, A.V. Shevchenko, A. Barch. Peculiarities of diffusion p-n junction formation in CdXHg1-XTe graded-band-gap epitaxial structures. Proc. SPIE – 2003. – Vol. 5126. – P. 391-397. 3. A.P. Vlasov, O.Yu. Bonchyk, V.O. Bogoboyashchyy, A. Barcz. High temperature arsenic doping of CdHgTe epitaxial layers. Cryst. Res. Technol. 2004. – Vol.39, №1. – P.11-22. 4. A.Р. Vlasov, O.Yu. Bonchyk, B.S. Sokolovskii, L.S. Monastyrskii, A. Barcz. The effect of built-in electric field on As diffusion in HgCdTe graded-band-gap epitaxial layers. Thin Solid Films. – 2004. – V.459. – P.28-31. 5. Z. Swiatek, I.M. Fodchuk, O.Yu. Bonchyk, I.V. Litvinchuk, W. Baliga, M. Michalec, J. Guspiel. Complex photoluminescence spectrum of Si nanostructures formed by the ion implantation and chemical etching. Archives of metallurgy and materials.- 2005.- v.50, p. 445-455. 6. A.P. Vlasov, O.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz , Z. Swiatek. Solid state doping of CdxHg1–xТе epitaxial layers with elements of V group. Semiconductor Physics, Quantum Electronics & Optoelectronics .- 2006.- v.9, p. 36-42. 7. P. Zieba, B.J. Datsko, V.V. Meleshko, I.A. Mohylyak, Z. Swiatek, L. Litynska-Dobrzynska. Interface Dynamics of Melt Instabilities on Semiconductor Surfaces. Solid State Phenomena, 2007, Vol. 129, pp. 137-143. |
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